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this is information on a product in full production. may 2015 docid024372 rev 3 1/16 STD25NF20 automotive-grade n-channel 200 v, 0.10 ? typ., 18 a stripfet? power mosfet in a dpak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? extremely low gate charge ? exceptional dv/dt capability ? low gate input resistance ? 100% avalanche tested applications ? switching applications description this n-channel enhancement mode power mosfet benefits from the latest refinement of stmicroelectronics' unique ?single feature size? strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. the result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. dpak 1 3 tab $0y '7$% * 6 order code v ds r ds(on) max i d p tot STD25NF20 200 v 0.125 18 a 110 w table 1. device summary order code marking package packing STD25NF20 25nf20 dpak tape and reel www.st.com
contents STD25NF20 2/16 docid024372 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 dpak (to-252) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid024372 rev 3 3/16 STD25NF20 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 200 v v gs gate-source voltage 20 i d drain current (continuous) at t c = 25 c 18 a drain current (continuous) at t c = 100 c 11 i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 72 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 18 a, di/dt 200 a/s; v ds peak < v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 1.38 c/w r thj-pcb thermal resistance junction-pcb 50 (1) 1. when mounted on 1 inch 2 fr-4, 2 oz copper board table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 18 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 110 mj
electrical characteristics STD25NF20 4/16 docid024372 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = 200 v 1 a v ds = 200 v, t c =125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10 a 0.10 0.125 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 940 pf c oss output capacitance - 197 pf c rss reverse transfer capacitance -30 pf q g total gate charge v dd = 160 v, i d = 20 a, v gs = 10 v (see figure 13 ) -2839nc q gs gate-source charge - 5.6 nc q gd gate-drain charge - 14.5 nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d (on) turn-on delay time v dd = 100 v, i d = 10 a, r g = 4.7 , v gs = 10 v (see figure 14 and figure 17 ) -15-ns t r (v) voltage rise time - 30 - ns t d (off) turn-off-delay time - 40 - ns t f (i) fall time - 10 - ns
docid024372 rev 3 5/16 STD25NF20 electrical characteristics 16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 18 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 72 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 20 a, di/dt = 100 a/s v dd = 50 v (see figure 17 ) - 155 ns q rr reverse recovery charge - 775 nc i rrm reverse recovery current - 10 a t rr reverse recovery time i sd = 20 a, di/dt = 100 a/s v dd = 50 v, t j = 150 c (see figure 17 ) - 183 ns q rr reverse recovery charge - 1061 nc i rrm reverse recovery current - 11.6 a
electrical characteristics STD25NF20 6/16 docid024372 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=175c tc=25c single pulse am15627v1 . w s = wk n5 wkm& / w s = wk n 5 wkmf / w s w s 72(' w s v *,3*00*'2&+ , ' $ 9 '6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 *,3*00*'7&+ , ' $ 9 *6 9 9 '6 9 5 '6rq ? +9 , ' $ 9 *6 9
docid024372 rev 3 7/16 STD25NF20 electrical characteristics 16 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature v sd 3 9 i sd (a) (v) 6 18 12 15 0.5 0.6 0.7 0.8 0.9 t j =-50c t j =25c t j =175c am03982v1 v gs(th) 0.90 0.60 0.50 0.40 -50 0 t j (c) (norm) 1.10 50 100 150 0.70 0.80 1.00 am03980v1 r ds(on) 2.4 1.0 0.6 -50 0 t j (c) (norm) 50 100 150 0.8 1.6 1.2 1.4 2.2 1.8 2.0 am03981v1
test circuits STD25NF20 8/16 docid024372 rev 3 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024372 rev 3 9/16 STD25NF20 package information 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STD25NF20 10/16 docid024372 rev 3 4.1 dpak (to-252) package information figure 18. dpak (to-252) type a2 package outline bw\sh$buhy
docid024372 rev 3 11/16 STD25NF20 package information 16 table 9. dpak (to-252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r0.20 v2 0 8
package information STD25NF20 12/16 docid024372 rev 3 figure 19. dpak (to-252) recommended footprint (a) a. all dimensions are in millimeters )3bb5
docid024372 rev 3 13/16 STD25NF20 package information 16 4.2 packing information figure 20. tape outline for dpak (to-252) 3 $ ' 3 ) : ( ' % . 7 8vhugluhfwlrqriihhg 3 slwfkhvfxpxodwlyh wrohudqfhrqwdshpp 8vhugluhfwlrqriihhg 5 %hqglqjudglxv % )rupdfklqhuhirqo\ lqfoxglqjgudiwdqg udgllfrqfhqwulfdurxqg% $0y 7rsfryhu wdsh
package information STD25NF20 14/16 docid024372 rev 3 figure 21. reel outline for dpak (to-252) table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1 . 6 5 1 . 8 5n 5 0 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r4 0 t0 . 2 5 0 . 3 5 w1 5 . 7 1 6 . 3 $ ' % )xooudglxv *phdvxuhgdwkxe & 1 5((/',0(16,216 ppplq $ffhvvkroh $wvo rworfdwlrq 7 7dshvorw lqfruhiru wdshvwduwppplq zlgwk $0y
docid024372 rev 3 15/16 STD25NF20 revision history 16 5 revision history table 11. document revision history date revision changes 12-mar-2013 1 first release. 03-sep-2013 2 ? modified: title and features in cover page ? modified: figure 12 , 13 , 14 and 15 ? minor text changes 27-may-2015 3 text and formatting changes throughout document. in section 1: electrical ratings : - updated table 2 and table 3 in section 1: electrical ratings : - updated table 8 in section 2.1: electrical characteristics (curves) : - updated figure 4 and figure 5 updated section 4: package information
STD25NF20 16/16 docid024372 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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